| PART |
Description |
Maker |
| TLN210 TLN210F |
INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS
|
Toshiba Corporation
Toshiba Semiconductor
|
| ATC2B ATC31 ATC100B1R2KCA50X |
CAMERA PIR INFRA RED
CABLE CAMERA EXTN 15M
des 沙漠
|
Pletronics
|
| ICS300-CAB12 ICS300-CCB12 ICS300-CRB12 ICS300-CSB1 |
300 Series CamclosureTM Camera System INTEGRATED CAMERA SYSTEM, INDOOR/OUTDOOR, WALL OR CEILING
|
ETC[ETC]
|
| ICS300-CSV3A ICS300-MA12 ICS300-MA3 ICS300-MA6 ICS |
300 Series CamclosureTM Camera System INTEGRATED CAMERA SYSTEM, INDOOR/OUTDOOR, WALL OR CEILING 300系列CamclosureTM摄像系统集成摄像系统，室室外，墙壁或天花
RES,442,1%,0.25W
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
etc
|
| TLN107A E006145 |
INFRARED LED GaAS INFRARED EMITTER
From old datasheet system
INFRARED LED FOR PHOTO INTERRUTER
|
TOSHIBA[Toshiba Semiconductor]
|
| QEB421 QEB421TR |
SURFACE MOUNT INFRARED LIGHT EMITTING DIODE
SURFACE MOUNT INFRARED 2.4 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Lite-On Technology, Corp.
|
| WP34SF7C |
T-1 (3mm) INFRARED EMITTING DIODE 3 mm, 1 ELEMENT, INFRARED LED, 850 nm
|
Kingbright, Corp.
KINGBRIGHT[Kingbright Corporation]
|
| F5D3 F5D1 F5D2 |
AIGAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
QT[QT Optoelectronics]
|
| LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN11007 TLN110F |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Semiconductor
|
